H. Rupprecht, J. Woodall, et al.
Applied Physics Letters
We have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. We demonstrate multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are a viable candidate for long wavelength data communication applications. © 1992 IEEE
H. Rupprecht, J. Woodall, et al.
Applied Physics Letters
K. Weiser, M.H. Brodsky, et al.
Journal of Non-Crystalline Solids
T.N. Jackson, P. Solomon, et al.
IEEE T-ED
A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters