Z. Hang, D. Yan, et al.
Physical Review B
We have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. We demonstrate multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are a viable candidate for long wavelength data communication applications. © 1992 IEEE
Z. Hang, D. Yan, et al.
Physical Review B
T.N. Jackson, P. Solomon, et al.
IEEE T-ED
H. Qiang, Fred H. Pollak, et al.
Surface Science
S. Tiwari, G.D. Pettit, et al.
IEDM 1992