A.A. Onton, M.R. Lorenz, et al.
Journal of Applied Physics
The electroluminescence of ZnS: Mn thin-film memory devices is observed to occur in two components, one which is spatially homogeneous and one from localized bright regions less than ∼1 μm in diameter. The brightness-voltage hysteresis, or memory effect, is observed to reside exclusively in the luminescence of the localized bright regions in our devices. It is concluded that the memory effect arises from a negative resistance of a filamentary ac conduction mechanism in these regions.
A.A. Onton, M.R. Lorenz, et al.
Journal of Applied Physics
W. Rühle, V. Marrello, et al.
Journal of Electronic Materials
V. Marrello, M. Chen, et al.
CLEO 1982
M. Wöhlecke, V. Marrello, et al.
Journal of Applied Physics