S. Zafar, M. Yang, et al.
VLSI Technology 2005
Paper
Thermal stability of polycrystalline silicon/metal oxide interfaces
Abstract
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
Related
C. Krug, E. Gusev, et al.
Journal of Applied Physics
Huiling Shang, E. Gousev, et al.
ICSICT 2004
A.C. Callegari, P. Jamison, et al.
ECS Meeting 2005