Yih-Cheng Shih, Masanori Murakami, et al.
Journal of Applied Physics
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
Yih-Cheng Shih, Masanori Murakami, et al.
Journal of Applied Physics
A.C. Callegari, D. Lacey, et al.
Solid-State Electronics
A.C. Callegari, K. Babich, et al.
ECS Meeting 2007
E. Cartier, V. Narayanan, et al.
VLSI Technology 2004