C.Y. Wong, Alwin E. Michel, et al.
Journal of Applied Physics
Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.
C.Y. Wong, Alwin E. Michel, et al.
Journal of Applied Physics
J.Y.-C. Sun, Y. Taur, et al.
IEDM 1985
J. Silverman, V. Dimilia, et al.
Microelectronic Engineering
J.P. Gambino, M.D. Monkowski, et al.
JES