R. Ghez, J.S. Lew
Journal of Crystal Growth
Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.
R. Ghez, J.S. Lew
Journal of Crystal Growth
R. Ghez, M.B. Small
JES
J.A. Barker, D. Henderson, et al.
Molecular Physics
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures