Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We report the characterization of thin films of MoO3 and their implementation on a micromachined silicon-based structure to achieve considerably low power consumption. The sensing layer is capable of detecting NO2 up to a few ppm with considerably short response and recovery times. Investigation of structural features of the films is carried out by X-ray diffraction and electron microscopy. © 1998 Elsevier Science S.A. All rights reserved.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
K.N. Tu
Materials Science and Engineering: A