Thin-film gas sensor implemented on a low-power-consumption micromachined silicon structure

We report the characterization of thin films of MoO3 and their implementation on a micromachined silicon-based structure to achieve considerably low power consumption. The sensing layer is capable of detecting NO2 up to a few ppm with considerably short response and recovery times. Investigation of structural features of the films is carried out by X-ray diffraction and electron microscopy. © 1998 Elsevier Science S.A. All rights reserved.