POST OXIDATION ANNEAL AND RE-OXIDATION EFFECTS IN 5 nm SiO//2 FILMS.
- L. Dori
- M. Arienzo
- et al.
- 1986
- MRS Fall Meeting 1986
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16 results for Leonello Dori
Optimized Silicon-Rich Oxide (SRO) Deposition Process for 5-V-Only Flash EEPROM Applications
- Leonello Dori
- Alexandre Acovic
- et al.
- 1993
- IEEE Electron Device Letters
Direct observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
Trapping properties of very thin nitride/oxide gate insulators
- J.Y.-C. Sun
- M. Arienzo
- et al.
- 1987
- ESSDERC 1987
Thin-film gas sensor implemented on a low-power-consumption micromachined silicon structure
- Vincenzo Guidi
- Gian Carlo Cardinali
- et al.
- 1998
- Sensors and Actuators, B: Chemical
Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors
- P. Maccagnani
- R. Angelucci
- et al.
- 1998
- Sensors and Actuators, B: Chemical
A Smart Sensor System for Carbon Monoxide Detection
- G.C. Cardinali
- L. Dori
- et al.
- 1997
- Analog Integr Circuits Signal Process
Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors
- D.A. Buchanan
- A.D. Marwick
- et al.
- 1994
- Journal of Applied Physics
Moderate-temperature anneal of 7-nm thermal SiO2 in O 2- and H2O-free atmosphere: Effects on Si-SiO2 interface-trap distribution
- L. Dori
- J.H. Stathis
- et al.
- 1991
- Journal of Applied Physics
Fundamental chemical differences among Pb defects on (111) and (100) silicon
- J.H. Stathis
- L. Dori
- 1991
- Applied Physics Letters