Davood Shahrjerdi, Bahman Hekmatshoar, et al.
ECS Meeting 2012
Thin-film heterojunction field-effect transistor (HJFET) devices with hydrogenated amorphous Si gate and hydrogenated poly-Si source and drain regions are demonstrated on small-grain poly-Si substrates. The transistor fabrication process (excluding poly-Si preparation) temperature is below 200 °C. The HJFET devices enable lower operation voltages, steeper subthreshold characteristics, lower flicker noise, and higher stability than conventional poly-Si devices. A low-power HJFET amplifier suitable for capacitive reading of biological signals is also demonstrated.
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
ECS Meeting 2012
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Bahman Hekmatshoar
Electronics Letters
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
IEEE Journal of Photovoltaics