P. Solomon, S.E. Laux, et al.
DRC 2009
We review briefly some aspects of the history of Monte Carlo simulations of electronic transport in semiconductors. In the early days their heavy computational cost rendered them suitable only to study problems of pure physics, as simpler models provided the answers necessary to design 'electrostatically good' devices. Now that scaling has taken another meaning (i.e., looking for alternative materials, crystal orientations, device geometries, etc.), Monte Carlo simulations may gain popularity once more, since they allow an efficient and reliable evaluation of speculative ideas. We show examples of both aspects of the results of Monte Carlo work. © Springer Science + Business Media, Inc. 2004.
P. Solomon, S.E. Laux, et al.
DRC 2009
S.E. Laux, M.V. Fischetti
BCTM 1995
M.V. Fischetti, S.E. Laux
IEDM 1989
P. Braunlich, S.C. Jones, et al.
SPIE Laser-Induced Damage in Optical Materials 1989