A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The formation of self-aligned Ti(Si(1-x)Ge(x))2 on submicron lines is described. The silicide/germanide is formed by reacting sputtered Ti with epitaxially grown Si(1-x)Ge(x) of composition and thickness relevant to high mobility Si(1-x)Ge(x) channel field effect transistors. Ti(Si(1-x)Ge(x))2 formation on narrow lines was carried out on phosphorous doped material, because of the well known difficulties of forming silicide on heavily n-doped silicon. A companion set of boron doped blanket films was also processed. The results show that the process temperature required for the minimization of silicide/germanide sheet resistance is reduced as compared to silicide formation on Si alone. However, the silicide/germanide films agglomerate with increased high temperature processing more easily than pure silicide. The thermal stability is degraded more for films with higher Ge content and is a strong function of dopant type. Silicide/germanide formation on phosphorous doped Si(1-x)Ge(x) layers with x = 10% have a line width dependence similar to silicide formation. Formation on phosphorous doped Si(1-x)Ge(x) layers with x = 27% display an inverse line width dependence, with higher overall sheet resistance. Formation of silicide/germanide on blanket films of boron doped Si(1-x)Ge(x) with x = 27% behaved similar to the formation of silicide on silicon. © 1994 The Mineral,Metal & Materials Society,Inc.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry