High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992
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33 results for Vijay P. Kesan
A high-speed silicon metal-semiconductor-metal photodetector fully integrable with (Bi)CMOS circuits
- E. Bassous
- M. Scheuermann
- et al.
- 1991
- IEDM 1991
Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications
- V.P. Kesan
- P.G. May
- et al.
- 1990
- IEDM 1990
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
Probing band structure anisotropy in quantum wells via magnetotunneling
- Ulf Gennser
- V.P. Kesan
- et al.
- 1991
- Physical Review Letters
Surface-stress-induced order in SiGe alloy films
- F. Legoues
- V.P. Kesan
- et al.
- 1990
- Physical Review Letters
Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers
- F.K. LeGoues
- V.P. Kesan
- et al.
- 1990
- Physical Review Letters
Electroluminescence and Photoluminescence from Microporous Silicon p-n Junctions
- V.P. Kesan
- E. Bassous
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films