Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Evaporated Pd80Si20 and sputtered Gd16Co84 amorphous films were studied for structural relaxation during annealing with a Seeman-Bohlin X-ray diffractometer and for atomic diffusion using radioactive Au195 and Co57 tracers. The diffusion parameters for these two kinds of films with pre-annealing are presented. © 1982.
T.N. Morgan
Semiconductor Science and Technology
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
A. Reisman, M. Berkenblit, et al.
JES