X.J. Zhou, D.M. Fleetwood, et al.
IEEE TNS
A study was conducted on thermally driven D and H transport and exchange in typical metal-oxide-semiconductor (MOS) device structures. As such, D and H were quantified and profiled by elastic recoil detection (ERD), which was superior to SIMS in the accuracy of total amounts but showed limited depth resolution. The results clearly show that poly-Si and borophosphosilicate glass (BPSG) were effective in transporting hydrogenous species at rather low temperature.
X.J. Zhou, D.M. Fleetwood, et al.
IEEE TNS
J.-P. Han, E.M. Vogel, et al.
VLSI Technology 2003
E. Cartier, D.J. DiMaria
Microelectronic Engineering
E. Cartier, F.R. McFeely
Physical Review B