D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A theoretical investigation of quantum effects which can be controlled with an externally applied electric field has been carried out in multi-heterostructures consisting of three constituents: AlSb, GaSb and InAs. The calculations show that the energies of two-dimensional quantum levels, occurring at the InAs and GaSb interfaces, are drastically modified by a field perpendicular to the heterostructures. For the case of GaSb-AlSb-GaSb-InAs-AlSb-InAs, this effect leads to an electric-field-induced semimetal-semiconductor transition. © 1982.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Hiroshi Ito, Reinhold Schwalm
JES
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry