Ultra-thin, highly uniform thin film SOI MOSFET with low series resistance using pattern-constrained epitaxy (PACE)

We report a novel fabrication process for a self-aligned, ultra-thin, highly uniform thin film SOI MOSFET with low series resistance. SOI films as thin as 11 nm with 5% uniformity across the wafer was achieved. Self-aligned, ultra-thin SOI n-MOSFET's with 8 nm - 50 nm undoped channel were fabricated. Excellent device characteristics (Lef f=0.2 μm, gm=242 mS/mm, Rs/d=333 Ω - μm, Av(gm/gd)=43) were obtained.