Fabrication of three-terminal resonant tunneling devices in silicon-based material

Abstract

Laterally gated three-terminal resonant tunneling devices have been fabricated from Si/Si1-xGex double-barrier structures grown by atmospheric pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the entire fabrication scheme is compatible with current silicon technology. At T=77 K the resonant peak current can be modulated by 25% by applying a moderate gate voltage; at T=4.2 K, current modulation reaches 50%. We present calculations demonstrating that devices fabricated from optimized Si/Si1-xGe x structures will pinch off fully at moderate gate voltages and operate at liquid nitrogen temperatures.