Paper

01 Jan 1992

VA-3 Hydrogenation Effects on Polysilicon Thin-Film Transistor Structures

View publication

Abstract

No abstract available.

Paper

Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Sean E. Curry, P. Lenahan, et al.

Applied Physics Letters

Paper

Observation of multiple silicon dangling bond configurations in silicon nitride

D. Jousse, Jerzy Kanicki, et al.

Applied Physics Letters

Paper

Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure

M. Zelikson, K. Weiser, et al.

Applied Physics Letters

Paper

Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films

W.S. Lau, S.J. Fonash, et al.

Journal of Applied Physics

View all publications