Conference paperSCHOTTKY BARRIER FORMATION AT METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES.Jerzy Kanicki, M. Osama Aboelfotoh, et al.ICPS Physics of Semiconductors 1984
PaperNature of the dominant deep trap in amorphous silicon nitrideD.T. Krick, P. Lenahan, et al.Physical Review B
PaperElectron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitrideD. Jousse, Jerzy Kanicki, et al.Applied Surface Science
Conference paperNitrogen dangling bonds in hydrogenated amorphous silicon nitride thin filmsJerzy Kanicki, W.L. Warren, et al.SSDM 1992
