Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
We report transport measurements which we interpret as weak localization of two-dimensional conduction holes in a GaSb-InAs-GaSb quantum-well structure. This system is unique in that it has parallel conduction channels containing both holes and electrons. The longitudinal resistance of the sample was measured for temperatures between 0.006 and 25 K; the magnetoresistance was measured in a perpendicular magnetic field. Weak localization of the holes was indicated by negative magnetoresistance and by a large logarithmic correction to the conductivity. © 1984 The American Physical Society.
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano