Ab initio theory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1»1»1»)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1987
- Physical Review B
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29 results for K.C. Pandey
Ab initio theory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1987
- Physical Review B
Diffusion without vacancies or interstitials: A new concerted exchange mechanism
- K.C. Pandey
- 1986
- Physical Review Letters
Variable stoichiometry surface reconstructions: New models for GaAs(111) (2×2) and (19×19)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1986
- Physical Review Letters
Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2
- E. Kaxiras
- K.C. Pandey
- et al.
- 1986
- Physical Review Letters
(2×2) reconstructions of the {111} polar surfaces of GaAs
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1986
- Physical Review B
RECONSTRUCTION OF THE Si(100)-2 multiplied by 1 SURFACE.
- K.C. Pandey
- 1984
- ICPS Physics of Semiconductors 1984
Summary Abstract: Reconstruction of semiconductor surfaces: Si(111)-2ˣ1, Si(111)-7ˣ7, and GaAs(110)
- K.C. Pandey
- 1983
- JVSTA
Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)
- K.C. Pandey
- 1983
- Physica B+C
Reconstruction of semiconductor surfaces: Buckling, ionicity, and -bonded chains
- K.C. Pandey
- 1982
- Physical Review Letters