A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
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12 results for S.J. Allen Jr.
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
- Puneet Goyal
- Sneha Gupta
- et al.
- 2010
- IEEE International SOI Conference 2010
32 NM Logic patterning options with immersion lithography
- K. Lai
- S. Burns
- et al.
- 2008
- SPIE Advanced Lithography 2008
Lower resistance scaled metal contacts to silicide for advanced CMOS
- A. Topol
- C. Sheraw
- et al.
- 2006
- VLSI Technology 2006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
CYCLOTRON RESONANCE IN THE FRACTIONALLY QUANTIZED 2D ELECTRON GAS.
- Z. Schlesinger
- S. Allen
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
On the absorption of infrared radiation by electrons in semiconductor inversion layers
- S.J. Allen Jr.
- D.C. Tsui
- et al.
- 1993
- Solid State Communications
Cyclotron resonance in the two-dimensional hole gas in (Ga,Al)As/GaAs heterostructures
- Z. Schlesinger
- S.J. Allen Jr.
- et al.
- 1985
- Physical Review B