Fabrication and performance limits of sub-0.1 μm Cu interconnects
- T.S. Kuan
- C.K. Inoki
- et al.
- 2000
- Materials Research Society Symposium-Proceedings
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42 results for T.S. Kuan
Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching
- Y. Hsu
- T. Standaert
- et al.
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substrates
- Y. Hsu
- W.I. Wang
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Molecular-beam epitaxial GaAs/AlAs superlattices in the (311) orientation
- Y. Hsu
- W.I. Wang
- et al.
- 1994
- Physical Review B
Application of electron and ion beam analysis techniques to microelectronics
- T.S. Kuan
- P.E. Batson
- et al.
- 1992
- IBM J. Res. Dev
Hydrogen fluoride vapor etching for Pre-Epi silicon surface preparation
- Robert McIntosh
- Tung-Sheng Kuan
- et al.
- 1992
- Journal of Electronic Materials
Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxy
- T.S. Kuan
- Subramanian S. Iyer
- 1991
- Applied Physics Letters
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters