193 nm photoresist r&d: the risk & challenge
- Donald C. Hofer
- Robert Allen
- et al.
- 1996
- J. Photopolym. Sci. Tech.
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54 results for Donald C. Hofer
Lithographic feasibility of escap beyond quarter micron
- Hiroshi Ito
- Greg Breyta
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Resolution and etch resistance of a family of 193 nm positive resists
- R.D. Allen
- I.Y. Wan
- et al.
- 1995
- J. Photopolym. Sci. Tech.
Photochemical and photophysical studies on chemically amplified resists
- Nigel P. Hacker
- Donald C. Hofer
- et al.
- 1992
- J. Photopolym. Sci. Tech.
Synthesis and properties of segmented poly(hydroxyether‐siloxane)
- J.L. Hedrick
- B. Haidar
- et al.
- 2011
- Makromolekulare Chemie. Macromolecular Symposia
New high-resolution charge transfer x-ray and electron beam negative resist
- Donald C. Hofer
- Frank B. Kaufman
- et al.
- 2008
- Applied Physics Letters
Design of a positive resist for projection lithography in the mid‐UV
- Grant Willson
- Robert Miller
- et al.
- 2004
- Polymer Engineering & Science
Soluble polysilanes: An interesting new class of radiation sensitive materials
- R.D. Miller
- D. Hofer
- et al.
- 2004
- Polymer Engineering & Science
Studies of Chain Conformational Kinetics in Poly(di-n-alkylsilanes) by Spectroscopic Methods. 1. Poly(di-n-hexylsilane), Poly(di-n-heptylsilane), and Poly(di-n-octylsilane)
- J.F. Rabolt
- D. Hofer
- et al.
- 2002
- Macromolecules
Synthesis and Properties of Segmented and Block Poly(hydroxy ether-siloxane) Copolymers
- J.L. Hedrick
- B. Haidar
- et al.
- 2002
- Macromolecules