193 nm photoresist r&d: the risk & challenge

Abstract

In this paper we examine the technical and business environment in which 193 run photoresist R&D is conducted today. Semiconductor industry predictions of lithographic requirements for future generations of DRAM and Logic indicate the need for 0.18 and sub 0.18 urn manufacturing capability within the next decade. 248 nm DUV lithography and the tool/photoresist infrastructure is just reaching the state required for manufacturing at 0.25 urn dimensions after a decade of intensive effort at tool and photoresist development. 193 nm tool and photoresist development is beginning to demonstrate potential for 0.18-0.15 urn capability but much progress is required for the 193 lithography infrastructure to reach a the point at which manufacturing capability can be applied to the 1 Gb and later generations of semiconductor technologies. In this paper we will compare and contrast 248 and 193 nm photoresist R&D. ©1996 TAPJ.