Auger decay of X-point excitons in a type II GaAs/AlGaAs superlattice
- T.W. Steiner
- D.J. Wolford
- et al.
- 1988
- Superlattices and Microstructures
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47 results for D.J. Wolford
Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Applied Physics Letters
Measurement of absolute Al concentration in AlxGa1-xAs
- D. Yan
- J. Paul Farrell
- et al.
- 1987
- Nuclear Inst. and Methods in Physics Research, B
Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Journal of Applied Physics
Time decays of donor-bound excitons in GaAs under pressure-induced-X crossover
- H. Mariette
- D.J. Wolford
- et al.
- 1986
- Physical Review B
Thermally activated exciton transfer in GaAs1-xPx:N
- J.A. Kash
- H. Mariette
- et al.
- 1985
- Physical Review B
Exciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:N
- H. Mariette
- J.A. Kash
- et al.
- 1985
- Physical Review B
Low spin density amorphous hydrogenated germanium prepared by homogeneous chemical vapor deposition
- J.A. Reimer
- B.A. Scott
- et al.
- 1985
- Applied Physics Letters
Pressure dependence of shallow bound states in gallium arsenide
- D.J. Wolford
- J.A. Bradley
- 1985
- Solid State Communications
Homogeneous chemical vapor deposition
- B.A. Scott
- W.L. Olbricht
- et al.
- 1984
- JVSTA