The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime
- J.I. Lee
- B.B. Goldberg
- et al.
- 1987
- Solid State Communications
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71 results for Mordehai Heiblum
Dc performance of ballistic tunneling hot-electron transfer amplifiers
- M. Heiblum
- I.M. Anderson
- et al.
- 1986
- Applied Physics Letters
Origin of the nonexponential thermal emission kinetics of DX centers in GaAlAs
- E. Calleja
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum
- M. Eizenberg
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Tunnelling hot electron transfer amplifiers (THETA): Ballistic GaAs devices with current gain
- M. Heiblum
- D.C. Thomas
- et al.
- 1986
- Surface Science
Energy band discontinuities in heterojunctions measured by internal photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1986
- Surface Science
AC conductivity of (AlGa)AsGaAs heterostructures and silicon MOSFETS in the quantum Hall regime
- B.B. Goldberg
- T.P. Smith
- et al.
- 1986
- Surface Science
Magnetocapacitance measurements in GaAs heterostructures
- T.P. Smith III
- B.B. Goldberg
- et al.
- 1986
- Surface Science
GALLIUM ARSENIDE BALLISTIC TRANSISTOR?
- M.I. Nathan
- M. Heiblum
- 1986
- IEEE Spectrum
Direct measurement of the density of states of a two-dimensional electron gas
- T.P. Smith
- B.B. Goldberg
- et al.
- 1985
- Physical Review B