Schottky diode analysis for evaluation of RIE effects on silicon surfaces
- P. Spirito
- C.M. Ransom
- et al.
- 1986
- Solid-State Electronics
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16 results for C.M. Ransom
The effect of surface preparation on the production of low interfacial charge regrown interfaces
- T.F. Kuech
- E.D. Marshall
- et al.
- 1986
- Journal of Crystal Growth
Silicon near-surface disorder and etch residues caused by CCIF 3/H2 reactive ion etching
- G.S. Oehrlein
- C.M. Ransom
- et al.
- 1985
- Applied Physics Letters
Modifications to the Boonton 72BD capacitance meter for deep-level transient spectroscopy applications
- T.I. Chappell
- C.M. Ransom
- 1984
- Review of Scientific Instruments
Transport properties and defect states of a-Si:H grown by HOMOCVD
- Jerzy Kanicki
- C.M. Ransom
- et al.
- 1984
- Journal of Non-Crystalline Solids
The analysis of exponential and nonexponential transients in deep-level transient spectroscopy
- P.D. Kirchner
- W.J. Schaff
- et al.
- 1981
- Journal of Applied Physics