S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Conference paper
SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.
Abstract
The technique of short-time annealing has recently been shown to be helpful in removing ion implanation damage with minimal movement of dopant. The possibility of a dry-etch processing damage removal using short-time annealing is evaluated in this paper using the high temperature end of the normal anneal range to optimize the chance for defect removal.
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