Epitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall Reactor
- T.F. Kuech
- M.A. Tischler
- et al.
- 2019
- JES
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49 results for M.A. Tischler
The thermodynamics of a charged fermion layer at high rs values
- S. Shapira
- U. Sivan
- et al.
- 1996
- Surface Science
Dispersion measurements of hot holes in quantum wells
- J.A. Kash
- M. Zachau
- et al.
- 1994
- Semiconductor Science and Technology
Optical measurements of warped valence bands in quantum wells
- J.A. Kash
- M. Zachau
- et al.
- 1994
- Surface Science
Stability of visible luminescence from porous silicon
- J.L. Batstone
- M.A. Tischler
- et al.
- 1993
- Applied Physics Letters
Raman scattering from H or O terminated porous Si
- J.C. Tsang
- M.A. Tischler
- et al.
- 1992
- Applied Physics Letters
On the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors
- Sandip Tiwari
- Michael A. Tischler
- 1992
- Applied Physics Letters
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- M.A. Tischler
- P.M. Mooney
- et al.
- 1992
- Journal of Applied Physics
Luminescence degradation in porous silicon
- M.A. Tischler
- R.T. Collins
- et al.
- 1992
- Applied Physics Letters
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth