An In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE Electron Device Letters
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8 results for James J. Rosenberg
Investigation of stress effects on the direct current characteristics of GaAs metal-semiconductor field-effect transistors through the use of externally applied loads
- Patrick J. McNally
- Lisa S. Cooper
- et al.
- 1988
- Applied Physics Letters
Development and Experimental Verification of a Two-Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFET’s
- Jean-Claude Ramirez
- Patrick J. Mcnally
- et al.
- 1988
- IEEE T-ED
VA-6 Investigation of Stress Effects on the DC Characteristics of GaAs MESFET's Through the Use of Externally Applied Loads
- T.N. Jackson
- Jean-Claude Ramirez
- et al.
- 1987
- IEEE T-ED
Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility
- J. Woodall
- P.D. Kirchner
- et al.
- 1986
- Surface Science
VA-5 Pseudomorphic GaInAs/GaAs Single Quantum Well High Electron Mobility Transistor
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE T-ED
VA-8 Germanium MISFETs Exhibiting Low Interface State Density Using Ge3N4 Gate Insulator
- James J. Rosenberg
- 1983
- IEEE T-ED
Importance of Boundary Conditions to Conduction in Short Samples
- James J. Rosenberg
- Ellen J. Yoffa
- et al.
- 1981
- IEEE T-ED