Paper

01 Jan 1985

VA-5 Pseudomorphic GaInAs/GaAs Single Quantum Well High Electron Mobility Transistor

View publication

Abstract

No abstract available.

Paper

Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces

I.M. Vitomirov, A. Raisanen, et al.

Physical Review B

Paper

Molecular beam epitaxial growth and magnetic properties of Co-Pt superlattices oriented along the [001], [110] and [111] axes of Pt

C.H. Lee, R.F.C. Farrow, et al.

Journal of Magnetism and Magnetic Materials

Paper

In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces

X. Yin, H.-M. Chen, et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Paper

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

R.C. Gee, C.L. Lin, et al.

Electronics Letters

View all publications