PaperHigh carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAsT.J. De Lyon, N.I. Buchan, et al.Applied Physics Letters
PaperGas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100)T.P. Chin, J.C.P. Chang, et al.Applied Physics Letters
PaperAbsence of Fermi level pinning at metal-InxGa1-xAs(100) interfacesL.J. Brillson, M.L. Slade, et al.Applied Physics Letters
PaperAn In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMTJ.J. Rosenberg, M. Benlamri, et al.IEEE Electron Device Letters
