Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy
- C.R. Lu
- J.R. Anderson
- et al.
- 1991
- Physical Review B
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88 results for T.F. Kuech
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
Selective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs
- Ananth V. Annapragada
- Klavs F. Jensen
- et al.
- 1991
- Journal of Crystal Growth
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
- John A. Lebens
- Charles S. Tsai
- et al.
- 1990
- Applied Physics Letters
Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
- A. Palevski
- P. Solomon
- et al.
- 1990
- Applied Physics Letters
Nonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics
Stable and shallow PdIn ohmic contacts to n-GaAs
- L.C. Wang
- X.Z. Wang
- et al.
- 1990
- Applied Physics Letters