Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
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88 results for T.F. Kuech
The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Journal of Applied Physics
Intrinsic recombination and interface characterization in "surface-free" GaAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Intrinsic, heterointerface excitonic states in GaAs(n)/Al0.3Ga0.7As(p) double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs and AlxGa1-xAs with x0.35
- E.R. Glaser
- T.A. Kennedy
- et al.
- 1991
- Physical Review B
Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Physical Review B
Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy
- C.R. Lu
- J.R. Anderson
- et al.
- 1991
- Physical Review B
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth