Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs
- Ananth V. Annapragada
- Klavs F. Jensen
- et al.
- 1991
- Journal of Crystal Growth
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88 results for T.F. Kuech
Selective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
- John A. Lebens
- Charles S. Tsai
- et al.
- 1990
- Applied Physics Letters
Growth and properties of thin GaAs epitaxial layers on Al2O 3
- T.F. Kuech
- A. Segmüller
- et al.
- 1990
- Journal of Applied Physics
Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
- A. Palevski
- P. Solomon
- et al.
- 1990
- Applied Physics Letters
Field-effect transistor structure based on strain-induced polarization charges
- T.F. Kuech
- R.T. Collins
- et al.
- 1990
- Journal of Applied Physics
Stable and shallow PdIn ohmic contacts to n-GaAs
- L.C. Wang
- X.Z. Wang
- et al.
- 1990
- Applied Physics Letters
Nonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics
Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures
- U. Kaufmann
- W. Wilkening
- et al.
- 1990
- Physical Review B
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials