Field-effect transistor structure based on strain-induced polarization charges
- T.F. Kuech
- R.T. Collins
- et al.
- 1990
- Journal of Applied Physics
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88 results for T.F. Kuech
Growth and properties of thin GaAs epitaxial layers on Al2O 3
- T.F. Kuech
- A. Segmüller
- et al.
- 1990
- Journal of Applied Physics
Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor
- T.N. Jackson
- G. Pepper
- et al.
- 1990
- IEDM 1990
Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures
- U. Kaufmann
- W. Wilkening
- et al.
- 1990
- Physical Review B
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials
Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
Selectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)
- Ming L. Yu
- Ulrich Memmert
- et al.
- 1989
- Applied Physics Letters
Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa 1-xAs (0≤x≤0.3)
- E.D. Marshall
- L.S. Yu
- et al.
- 1989
- Applied Physics Letters