Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
Publications
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88 results for T.F. Kuech
The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions
- M.A. Tischler
- H. Baratte
- et al.
- 1988
- Journal of Crystal Growth
The control and modeling of doping profiles and transients in MOVPE growth
- T.F. Kuech
- P.J. Wang
- et al.
- 1988
- Journal of Crystal Growth
Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Applied Physics Letters
Measurement of absolute Al concentration in AlxGa1-xAs
- D. Yan
- J. Paul Farrell
- et al.
- 1987
- Nuclear Inst. and Methods in Physics Research, B
Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Journal of Applied Physics
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
- E.D. Marshall
- B. Zhang
- et al.
- 1987
- Journal of Applied Physics
Metal-organic vapor phase epitaxy of compound semiconductors
- T.F. Kuech
- 1987
- Materials Science Reports
Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
- T.E. Schlesinger
- T.F. Kuech
- 1986
- Applied Physics Letters
The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1-xAs layers and heterostructures
- T.F. Kuech
- E. Veuhoff
- et al.
- 1986
- Journal of Crystal Growth