63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
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138 results for B.S. Meyerson
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
Narrow band gap base heterojunction bipolar transistors using SiGe alloys
- Subramanian S. Iyer
- G.L. Patton
- et al.
- 1990
- Thin Solid Films
Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition. Process fundamentals
- B.S. Meyerson
- 1990
- IBM J. Res. Dev
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene
- A. Grill
- B.S. Meyerson
- et al.
- 1990
- IBM J. Res. Dev