Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures
- P.J. Wang
- F. Fang
- et al.
- 1989
- Applied Physics Letters
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138 results for B.S. Meyerson
Kinetics and mechanism of oxidation of SiGe: Dry versus wet oxidation
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Applied Physics Letters
Dopant redistribution during oxidation of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Applied Physics Letters
High hole mobility in Si/Si1-xGex/Si p-type modulation-doped double heterostructures
- P.J. Wang
- B.S. Meyerson
- et al.
- 1989
- Applied Physics Letters
Oxidation studies of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Journal of Applied Physics
Boron-doped emitters for high-performance vertical pnp transistors
- J. Warnock
- P.F. Lu
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989