Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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138 results for B.S. Meyerson

50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- - Seshadri Subbanna
  - Gregory Freeman
  - et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- - S. Subbanna
  - L. Larson
  - et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- - S. Voldman
  - P. Juliano
  - et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)
Low-temperature Si and Si:Ge epitaxy by uitrahigh-vacuum/ chemical vapor deposition: Process fundamentals
- - B.S. Meyerson
- 2000
- IBM J. Res. Dev
A low-temperature insulating phase at v = 1.5 for 2D holes in high-mobility Si-Si_1-xGe_x heterostructures with Landau level degeneracy
- - R.B. Dunford
  - E.E. Mitchell
  - et al.
- 1999
- Journal of Physics Condensed Matter
Effect of illumination on transport properties of the high mobility 2D hole gas in Si-SiGe heterostructures
- - V.A. Stadnik
  - E.E. Mitchell
  - et al.
- 1998
- Physica B: Condensed Matter
Hall measurements of the insulating phases at υ = 1.5 and υ ∼ 0.5 in p-type Si/Si_1-xGe_x heterostructures using pulsed magnetic fields
- - E.E. Mitchell
  - R.G. Clark
  - et al.
- 1998
- Physica B: Condensed Matter
Defect states in strain-relaxed Si_0.7Ge_0.3 layers grown at low temperature
- - P.M. Mooney
  - L. Tilly
  - et al.
- 1997
- Journal of Applied Physics
Low-field magnetoresistance in Si/SiGe quantum wells
- - A. Prinz
  - G. Brunthaler
  - et al.
- 1997
- Thin Solid Films
Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- - I. Adesida
  - M. Arafa
  - et al.
- 1997
- Microelectronic Engineering