In Situ Arsenic-Doped Polysilicon for VLSI Applications
- Maurizio Arienzo
- Andrew C. Megdanis
- et al.
- 1986
- IEEE T-ED
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32 results for M. Arienzo
POLYSILICON EMITTER RESISTANCE AND CARRIER TRANSPORT STUDIES.
- J.M.C. Stork
- C.Y. Wong
- et al.
- 1984
- VLSI Technology 1984
Experimental Study of the Minority-Carrier Transport at the Polysilicon—Monosilicon Interface
- Arnost Neugroschel
- Maurizio Arienzo
- et al.
- 1985
- IEEE T-ED
Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
- C.T. Chuang
- G.P. Li
- et al.
- 1985
- IEEE T-ED
Heavily Doped Polysilicon-Contact Solar Cells
- F.A. Lindholm
- A. Neugroschel
- et al.
- 1985
- IEEE Electron Device Letters
Correlation Between the Diffusive and Electrical Barrier Properties of the Interface in Polysilicon Contacted n+-p Junctions
- Johannes M.C. Stork
- Maurizio Arienzo
- et al.
- 1985
- IEEE T-ED
INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- C.T. Chuang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
LPCVD IN-SITU ARSENIC DOPED POLYSILICON FOR VLSI APPLICATIONS.
- M. Arienzo
- A.C. Megdanis
- et al.
- 1984
- IEDM 1984
Diffusion of arsenic in bilayer polycrystalline silicon films
- M. Arienzo
- Y. Komem
- et al.
- 1984
- Journal of Applied Physics
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- B.J. Ginsberg
- M. Arienzo
- et al.
- 1983
- ECS Meeting 1983