A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
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90 results for Jack Y. C. Sun
On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology
- J. Zhao
- G.P. Li
- et al.
- 1993
- VLSI-TSA 1993
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
A low-power static frequency divider circuit in bipolar technology
- Kai Y. Toh
- Yen C. Tzeng
- et al.
- 1992
- BCTM 1992