Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
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90 results for Jack Y. C. Sun
SiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
Perimeter effects in small geometry bipolar transistors
- Wai Lcc
- Jack Y.-C. Sun
- et al.
- 1992
- VLSI Technology 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- John D. Cresslcr
- James H. Comfort
- et al.
- 1992
- VLSI Technology 1992
A 5Gb/s 16×16 Si-bipolar crosspoint switch
- Hyun Shin
- James Warnock
- et al.
- 1992
- ISSCC 1992
IIA-3 p+ Polysilicon Emitters for Sub-0.5 µm High-Performance p-n-p
- J. Warnock
- J.Y.-C. Sun
- et al.
- 1992
- IEEE T-ED
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters