A 3.5-ns/77 K and 6.2-ns/300 K 64K CMOS RAM with ECL Interfaces
- Terry I. Chappell
- Stanley E. Schuster
- et al.
- 1989
- IEEE Journal of Solid-State Circuits
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90 results for Jack Y. C. Sun
Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi2
- Yuan Taur
- Jack Yuan-Chen Sun
- et al.
- 1987
- IEEE T-ED
On the Resistivity of TiSi2: The Implication for Low-Temperature Applications
- Lia Krusin-Elbaum
- Jack Yuan-Chen Sun
- et al.
- 1987
- IEEE T-ED
Submicrometer-Channel CMOS for Low-Temperature Operation
- Jack Yuan-Chen Sun
- Yuan Taur
- et al.
- 1987
- IEEE T-ED
On the Accuracy of Channel Length Characterization of LDD MOSFET's
- Jack Y.-C. Sun
- Matthew R. Wordeman
- et al.
- 1986
- IEEE T-ED
Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide
- Fang-Shi J. Lai
- Jack Yuan-Chen Sun
- et al.
- 1986
- IEEE T-ED
A Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED
IIIB-2 Channel Length Characterization of LDD MOSFET's-
- Jack Y. C. Sun
- Matthew R. Wordeman
- et al.
- 1985
- IEEE T-ED
An Analytical One-Dimensional Model for Lightly Doped Drain (LDD) MOSFET Devices
- Fang-Shi J. Lai
- Jack Yuan-Chen Sun
- 1985
- IEEE T-ED
IIIB-1 Degradation of 77-K MOSFET Characteristics Due to Channel Hot Electrons
- Jack Y. C. Sun
- Matthew R. Wordeman
- 1984
- IEEE T-ED