PaperA 286 mm2 256 Mb DRAM with ×32 both-ends DQYohji Watanabe, Hing Wong, et al.IEICE Transactions on Electronics
PaperInverter Performance Of Deep-Submicrometer Mosfet'SGeorge A. Sai-Halasz, Matthew R. Wordeman, et al.IEEE Electron Device Letters
PaperFault-tolerant designs for 256 Mb DRAMToshiaki Kirihata, Yohji Watanabe, et al.IEICE Transactions on Electronics
PaperGeneralized Scaling Theory and Its Application to a 1/4 micrometer MOSFET DesignRobert H. Dennard, Matthew R. WordemanIEEE T-ED
