Conference paperMonte-Carlo simulations of performance scaling in strained-Si nMOSFETsArvind Kumar, Massimo V. Fischetti, et al.SISPAD 2005
PaperA study of channel avalanche breakdown in scaled n-mosfet’sSteven E. Laux, Fritz H. GaensslenIEEE T-ED
PaperMONTE: A Program to Simulate the Heterojunction Devices in Two DimensionsJeffrey Y.-F. Tang, Steven E. LauxIEEE TCADIS
PaperFlexible test mode approach for 256-Mb DRAMToshiaki Kirihata, Hing Wong, et al.IEEE Journal of Solid-State Circuits
