Interface Properties of Hydrogenated Amorphous Carbon Films on Ge(100) Surfaces
- M. Wittmer
- D. Ugolini
- et al.
- 2019
- JES
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46 results for M. Wittmer
Solute effect of arsenic on the microstructure and diffusion mechanism in platinum-silicides
- M. Wittmer
- J.T. Wetzel
- et al.
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Schottky barriers and the reactivity of the interface
- M. Wittmer
- J. Freeouf
- 1994
- EPL
Lifetime measurements on silicon-on-insulator wafers
- J. Freeouf
- N. Braslau
- et al.
- 1993
- Applied Physics Letters
Interface states and the barrier height of Schottky diodes
- M. Wittmer
- J. Freeouf
- 1993
- Physics Letters A
High-Resolution Depth Profiling of Ultrathin Silicon Oxide/Nitride/Oxide Layers
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1993
- JES
Silicide formation and dopant diffusion in silicon
- M. Wittmer
- P. Fahey
- et al.
- 1992
- Physical Review B
High hydrogen concentrations produced by segregation into p+ layers in silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
Conduction mechanism in PtSi/Si Schottky diodes
- Marc Wittmer
- 1991
- Physical Review B
Carrier recombination and high-barrier Schottky diodes on silicon
- M. Wittmer
- 1990
- Applied Physics A Solids and Surfaces