Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
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16 results for S.B. Brodsky
LPCVD TUNGSTEN SILICIDE WITH TITANIUM UNDERLAYER.
- R.V. Joshi
- L. Krusin-Elbaum
- et al.
- 1985
- VLSI Technology 1985
Sub-400-ps ISL circuits
- Ching-Te Chuang
- G.P. Li
- et al.
- 1986
- IEEE Electron Device Letters
Formation of TiSi2 and TiN during nitrogen annealing of magnetron sputtered Ti films
- E.D. Adams
- K.Y. Ahn
- et al.
- 1985
- JVSTA
INTERACTION BETWEEN Ti AND SiO//2.
- C.-Y. Ting
- M. Wittmer
- et al.
- 1983
- ECS Meeting 1983
INTERACTION BETWEEN Ti AND SiO//2.
- C.-Y. Ting
- M. Wittmer
- et al.
- 1983
- VLSI Science and Technology 1983