INTERACTION BETWEEN Ti AND SiO//2.

Abstract

We have investigated the interaction between Ti and SiO//2 in the temperature range of 400 to 970 degree C. The reaction proceeds in a layer-by-layer fashion and consists of reduction of the SiO//2 due to the formation of a Ti-rich silicide at the interface and at high temperatures a Ti-rich oxide near the surface. The reaction starts around 400 degree C and the loss of SiO//2 becomes significant above 500 degree C. The results extend those of two recent photoelectron spectroscopy studies on low coverages of Ti and SiO//2 to the case of thin films, as they are used in integrated circuits.