SOI for a 1-Volt CMOS Technology and Application to a 512kb SRAM with 3.5 ns Access Time
- G. Shahidi
- T.H. Ning
- et al.
- 1993
- IEDM 1993
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15 results for Barbara Chappell
A Novel Borderless Contact/Interconnect Technology Using Aluminum Oxide Etch Stop for High Performance SRAM and Logic
- S. Subbanna
- D.L. Harame
- et al.
- 1993
- IEDM 1993
Static timing analysis for self resetting circuits
- V. Narayanan
- B.A. Chappell
- et al.
- 1996
- ICCAD 1996
Self resetting logic register and incrementer
- R.A. Haring
- M.S. Milshtein
- et al.
- 1996
- VLSI Circuits 1996
3.5ns CMOS 64K ECL RAM at 77°K
- S.E. Schuster
- T.I. Chappell
- et al.
- 1988
- VLSI Circuits 1988
6.2 ns 64Kb CMOS RAM with ECL interfaces
- T.I. Chappell
- S.E. Schuster
- et al.
- 1988
- VLSI Circuits 1988
A high performance liquid-nitrogen CMOS SRAM technology
- J.Y.-C. Sun
- S. Klepner
- et al.
- 1988
- ESSDERC 1988
CMOS scaling in the 0.1-μm, 1.X-volt regime for high-performance applications
- G. Shahidi
- J. Warnock
- et al.
- 1995
- IBM J. Res. Dev
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
A 2-ns Cycle, 3.8-ns Access 512-kb CMOS ECL SRAM with a Fully Pipelined Architecture
- Terry I. Chappell
- Barbara A. Chappell
- et al.
- 1991
- IEEE Journal of Solid-State Circuits