A 3.5-ns/77 K and 6.2-ns/300 K 64K CMOS RAM with ECL Interfaces
- Terry I. Chappell
- Stanley E. Schuster
- et al.
- 1989
- IEEE Journal of Solid-State Circuits
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15 results for Barbara Chappell
Fast CMOS ECL Receivers with 100-mV Worst-Case Sensitivity
- Barbara A. Chappell
- Terry I. Chappell
- et al.
- 1988
- IEEE Journal of Solid-State Circuits
Stability and SER Analysis of Static RAM Cells
- Barbara Chappell
- Stanley E. Schuster
- et al.
- 1985
- IEEE Journal of Solid-State Circuits
Stability and SER Analysis of Static RAM Cells
- Barbara Chappell
- Stanley E. Schustfr
- et al.
- 1985
- IEEE T-ED
A 20 ns 64K (4K X16) NMOS RAM
- Stanley E. Schuster
- Barbara Chappell
- et al.
- 1984
- IEEE Journal of Solid-State Circuits