Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
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64 results for J.M.C. Stork
On the Leverage of High-fT Transistors for Advanced High-Speed Bipolar Circuits
- C.T. Chuang
- Ken Chin
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
IIA-4 Low-Temperature Operation of SiGe p-n-p HBT's
- E.F. Crabbé
- D.L. Harame
- et al.
- 1992
- IEEE T-ED
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
SiGe alloys: growth, properties and applications
- Maurizio Arienzo
- Subramanian S. Iyer
- et al.
- 1991
- Applied Surface Science