Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- Enrico Zanoni
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Electron Device Letters
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64 results for J.M.C. Stork
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters