Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
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64 results for J.M.C. Stork
Heterojunction Bipolar Transistors Using Si-Ge Alloys
- Subramanian S. Iyer
- Gary L. Patton
- et al.
- 1989
- IEEE T-ED
Base Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen Temperature
- Johannes M. C. Stork
- David L. Harame
- et al.
- 1989
- IEEE T-ED
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Bipolar transistor scaling for minimum switching delay and energy dissipation
- J.M.C. Stork
- 1988
- IEDM 1988
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Nonideal Base Current in Bipolar Transistors at Low Temperatures
- Jason C. S. Woo
- James D. Plummer
- et al.
- 1987
- IEEE T-ED
Bipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985