E.E. Mitchell, R.G. Clark, et al.
Physica B: Condensed Matter
Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE
E.E. Mitchell, R.G. Clark, et al.
Physica B: Condensed Matter
Sophie Verdonckt-Vandebroek, Bernard S. Meyerson, et al.
IEEE Transactions on Electron Devices
P.J. Wang, F. Fang, et al.
Applied Physics Letters
J.M.C. Stork, D.L. Harame, et al.
GaAs IC 1994