A New Dynamic Beta-Ratio Circuit Technique for Strained-Si Technology
- Rajiv V. Joshi
- Keunwoo Kim
- et al.
- 2003
- IEEE International SOI Conference 2003
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136 results for C.T. Chuang
Oxide breakdown model and its impact on SRAM cell functionality
- R. Rodríguez
- R.V. Joshi
- et al.
- 2003
- SISPAD 2003
Physical compact model for threshold voltage in short-channel double-gate devices
- Keunwoo Kim
- J.G. Fossum
- et al.
- 2003
- SISPAD 2003
Influence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Strained-Si devices and circuits for low-power applications
- Keunwoo Kim
- R.V. Joshi
- et al.
- 2003
- ISLPED 2003
Strained-Si Devices and Circuits for Low-Power Applications
- Keunwoo Kim
- Rajiv V. Joshi
- et al.
- 2003
- ISLPED 2003
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2002
- IEEE International SOI Conference 2002
SOI-optimized 64-bit high-speed CMOS adder design
- Jae-Joon Kim
- Rajiv Joshi
- et al.
- 2002
- VLSI Circuits 2002
High performance low power VT- wave-pipeline CMOS circuit in PD/SOI technology
- R.V. Joshi
- F. Yee
- et al.
- 2002
- IEEE International SOI Conference 2002
Analysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability